Thermal Stability and Electrical Properties of boronand phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale

الملخص

-We report the synthesis, structure and electrical properties in boron- and phosphorus-doped hydrogenated silicon and germanium multilayers (P- a-Si:H/a-Ge:H and B-doped aSi:H/a-Ge:H) , with the activation energy of crystallization of the P-and B-doped are 42.15 and 67.6 kJ/mol, respectively. In this materials, the incorporation of boron or phosphorus leads to decrease activation energies of crystallization and an increase of the conductivity. The photo-electrical conductivity increases more rapidly than dark - electrical conductivity which confirms the sensitive thin film for light