Thermal Stability and Electrical Properties of boronand phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale

Authors

  • Ibrahim A. Saleh Physics Department, Faculty of Science, Benghazi University, Libya Author
  • Tarek M. Fayez School of physics, Sebha University, Libya Author
  • Mustafah M. A. Ahmad Physics Department, Faculty of Science, Benghazi University, Libya Author

Keywords:

Doped, nano-multilayers (NMLs), a-Si:H/a-Ge:H, hydrogen dilution, structure, electrical conductivity, crystallization, Avrami's equation

Abstract

-We report the synthesis, structure and electrical properties in boron- and phosphorus-doped hydrogenated silicon and germanium multilayers (P- a-Si:H/a-Ge:H and B-doped aSi:H/a-Ge:H) , with the activation energy of crystallization of the P-and B-doped are 42.15 and 67.6 kJ/mol, respectively. In this materials, the incorporation of boron or phosphorus leads to decrease activation energies of crystallization and an increase of the conductivity. The photo-electrical conductivity increases more rapidly than dark - electrical conductivity which confirms the sensitive thin film for light 

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Published

2021-12-01

Issue

Volume 2, Issue 2, 2021

Section

Articles

How to Cite

Thermal Stability and Electrical Properties of boronand phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale. (2021). Albahit Journal of Applied Sciences, 2(2), 02-08. https://albahitjas.com.ly/index.php/albahit/article/view/26